SiC Mosfet-广州立功电子科技有限公司

NTBG022N120M3S

D2PAK-7L package with Kelvin source configuration

Excellent FOM [ = Rdson * Eoss ]

Ultra Low Gate Charge (QG(tot) = 151 nC)

High Speed Switching with Low Capacitance (Coss = 146 pF)

15V to 18V Gate Drive

New M3S technology: 22 mohm RDS(ON) with low Eon and Eoff losses

100% Avalanche Tested

Halide Free and RoHS Compliant

NTBG030N120M3S

D2PAK-7L package with Kelvin source configuration

Excellent FOM [ = Rdson * Eoss ]

Ultra Low Gate Charge (QG(tot) = 107 nC)

High Speed Switching with Low Capacitance (Coss = 106 pF)

15V to 18V Gate Drive

New M3S technology: 29 mohm RDS(ON) with low Eon and Eoff losses

100% Avalanche Tested

Halide Free and RoHS Compliant

选型表下载

型号	Blocking Voltage BVDSS (V)	ID(max) (A)	RDS(on) Typ @ 25°C (mΩ)	Qg Total (nC)	Output Capacitance (pF)	Package Type
NTBG014N120M3P	1200	74	14	329	262	D2PAK7 (TO-263-7L HV)
NTBG022N120M3S	1200	72	22	151	146	D2PAK7 (TO-263-7L HV)
NTBG023N065M3S	650	70	23	69	153	D2PAK7 (TO-263-7L HV)
NTBG030N120M3S	1200	77	29	107	106	D2PAK7 (TO-263-7L HV)
NTBG032N065M3S	650	52	32	55	113	D2PAK7 (TO-263-7L HV)
NTBG040N120M3S	1200	57	40	75	80	D2PAK7 (TO-263-7L HV)
NTBG070N120M3S	1200	36	65	57	57	D2PAK7 (TO-263-7L HV)
NTBL023N065M3S	650	77	23	69	152	H-PSOF8L 9.90x10.38x2.30, 1.20P
NTBL032N065M3S	650	55	32	55	113	H-PSOF8L 9.90x10.38x2.30, 1.20P
NTCR013N120M3S	1200	151	13	254	262	-
NTH4L013N120M3S	1200	151	13	254	262	TO-247-4
NTH4L014N120M3P	1200	127	14	262	329	TO-247-4
NTH4L022N120M3S	1200	89	22	137	146	TO-247-4
NTH4L023N065M3S	650	67	23	69	153	TO-247-4
NTH4L030N120M3S	1200	73	29	107	106	TO-247-4
NTH4L032N065M3S	650	50	32	55	114	TO-247-4
NTH4L040N120M3S	1200	54	40	75	80	TO-247-4
NTH4L070N120M3S	1200	36	65	57	57	TO-247-4
NTHL022N120M3S	1200	89	22	137	146	TO-247-3LD
NTHL023N065M3S	650	70	23	69	153	TO-247-3LD
NTHL030N120M3S	1200	73	29	107	106	TO-247-3LD
NTHL032N065M3S	650	51	32	55	114	TO-247-3LD
NTHL040N120M3S	1200	54	40	75	80	TO-247-3LD
NTHL070N120M3S	1200	34	65	57	57	TO-247-3LD
NVBG022N120M3S	1200	58	22	148	148	D2PAK7 (TO-263-7L HV)
NVBG023N065M3S	650	40	23	69	152	D2PAK7 (TO-263-7L HV)
NVBG030N120M3S	1200	77	29	107	106	D2PAK7 (TO-263-7L HV)
NVBG032N065M3S	650	23	32	55	113	D2PAK7 (TO-263-7L HV)
NVBG040N120M3S	1200	57	40	75	80	D2PAK7 (TO-263-7L HV)
NVBG070N120M3S	1200	36	65	57	57	D2PAK7 (TO-263-7L HV)
NVH4L022N120M3S	1200	89	22	148	148	TO-247-4
NVH4L023N065M3S	650	40	23	69	153	TO-247-4
NVH4L030N120M3S	1200	73	29	107	106	TO-247-4
NVH4L032N065M3S	650	23	32	55	114	TO-247-4
NVH4L040N120M3S	1200	54	40	75	80	TO-247-4
NVH4L070N120M3S	1200	34	65	57	57	TO-247-4
NVHL023N065M3S	650	40	23	69	153	TO-247-3LD
NVHL070N120M3S	1200	34	65	57	57	TO-247-3LD

微处理器

电源与外围

汽车电子

物联网（IoT）解决方案

汽车电子解决方案

SiC Mosfet

产品型号

NTBG014N120M3P

NTBG022N120M3S

NTBG030N120M3S